K9F2G08Q0M 데이터 시트보기 (PDF) - Samsung
부품명
상세내역
일치하는 목록
K9F2G08Q0M Datasheet PDF : 38 Pages
| |||
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Document Title
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Revision History
Revision No History
0.5
1. The value of AC parameters for K9F2G08U0M are changed.
ITEM
K9F2G08U0M
Before
After
tWC
45
30
tWP
25
15
tWH
15
10
tRC
50
30
tRP
25
15
tREH
15
10
tREA
30
18
tCEA
45
23
tADL
-
100
2. The definition and value of setup and hold time are changed.
ITEM
K9F2G16U0M
K9F2GXXQ0M
K9F2G08U0M
tCLS
25
10
tCLH
10
5
tCS
35
15
tCH
10
5
tALS
25
10
tALH
10
5
tDS
20
10
tDH
10
5
3. The tADL(Address to Data Loading Time) is added.
- tADL Minimum 100ns (Page 11, 22~25)
- tADL is the time from the WE rising edge of final address cycle
to the WE rising edge of first data cycle at program operation.
4. Added addressing method for program operation
0.6
1. PKG(TSOP1, WSOP1) Dimension Change
Preliminary
FLASH MEMORY
Draft Date
Apr. 22.2004
Remark
Preliminary
May. 19. 2004
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
2
Share Link: 