BLF147 데이터 시트보기 (PDF) - NXP Semiconductors.
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BLF147 Datasheet PDF : 15 Pages
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NXP Semiconductors
VHF power MOS transistor
Product specification
BLF147
handbook,3h0alfpage
Gp
(dB)
20
MGP053
handbook,6h0alfpage
ηD
(%)
40
20
MGP054
10
0
100
200
PL (W) PEP
Class-AB operation; VDS = 28 V; IDQ = 1 A;
RGS = 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.9 Power gain as a function of load power;
typical values.
0
0
100
200
PL (W) PEP
Class-AB operation; VDS = 28 V; IDQ = 1 A;
RGS = 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.10 Efficiency as a function of load power;
typical values.
handbook−,2h0alfpage
d3
(dB)
−30
MGP055
−40
−50
−60
0
100
200
PL (W) PEP
Class-AB operation; VDS = 28 V; IDQ = 1 A;
RGS = 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.11 Third order intermodulation distortion as a
function of load power; typical values.
handbook−,2h0alfpage
d5
(dB)
−30
MGP056
−40
−50
−60
0
100
200
PL (W) PEP
Class-AB operation; VDS = 28 V; IDQ = 1 A;
RGS = 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.12 Fifth order intermodulation distortion as a
function of load power; typical values.
Rev. 06 - 5 December 2006
7 of 15
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