BLF147 데이터 시트보기 (PDF) - NXP Semiconductors.
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BLF147 Datasheet PDF : 15 Pages
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NXP Semiconductors
VHF power MOS transistor
Product specification
BLF147
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)DSS
IDSS
IGSS
VGSth
∆VGS
gfs
RDSon
IDSX
Cis
Cos
Crs
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
matched pairs
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
CONDITIONS
ID = 100 mA; VGS = 0
VGS = 0; VDS = 28 V
VGS = ±20 V; VDS = 0
ID = 200 mA; VDS = 10 V
ID = 100 mA; VDS = 10 V
ID = 8 A; VDS = 10 V
ID = 8 A; VGS = 10 V
VGS = 10 V; VDS = 10 V
VGS = 0; VDS = 28 V; f = 1 MHz
VGS = 0; VDS = 28 V; f = 1 MHz
VGS = 0; VDS = 28 V; f = 1 MHz
MIN. TYP. MAX. UNIT
65 −
−
V
−
−
5
mA
−
−
1
µA
2
−
4.5 V
−
−
100 mV
5
7.5 −
S
−
0.1 0.15 Ω
−
37 −
A
−
450 −
pF
−
360 −
pF
−
55 −
pF
VGS group indicator
GROUP
A
B
C
D
E
F
G
H
J
K
L
M
N
MIN.
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
LIMITS
(V)
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
GROUP
O
P
Q
R
S
T
U
V
W
X
Y
Z
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
LIMITS
(V)
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
Rev. 06 - 5 December 2006
4 of 15
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