NXP Semiconductors
VHF power MOS transistor
Product specification
BLF147
handbook,3h0alfpage
GP
(dB)
20
MGP058
10
0
0
10
20
30
f (MHz)
Class-AB operation; VDS = 28 V; IDQ = 1 A;
RGS = 6.25 Ω; PL = 150 W (PEP); RL = 2.1 Ω.
Fig.14 Power gain as a function of frequency;
typical values.
handbook,1h0alfpage
Zi
(Ω)
5
MGP059
ri
0
xi
−5
0
10
20
30
f (MHz)
Class-AB operation; VDS = 28 V; IDQ = 1 A;
RGS = 6.25 Ω; PL = 150 W (PEP); RL = 2.1 Ω.
Fig.15 Input impedance as a function of frequency
(series components); typical values.
handbook, h4alfpage
Zi
(Ω)
2
0
−2
MGP061
ri
xi
handbook, h3alfpage
ZL
(Ω)
2
1
0
MGP062
RL
XL
−4
0
50
100
150
200
f (MHz)
Class-B operation; VDS = 28 V; IDQ = 0.2 A;
RGS = 15 Ω; PL = 150 W.
Fig.16 Input impedance as a function of frequency
(series components); typical values.
−1
0
50
100
150
200
f (MHz)
Class-B operation; VDS = 28 V; IDQ = 0.2 A;
RGS = 15 Ω; PL = 150 W.
Fig.17 Load impedance as a function of frequency
(series components); typical values.
Rev. 06 - 5 December 2006
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