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NXP Semiconductors
VHF power MOS transistor
30
handbook, halfpage
Gp
(dB)
20
MGP060
10
0
0
50
100
150
200
f (MHz)
Class-B operation; VDS = 28 V; IDQ = 0.2 A;
RGS = 15 Ω; PL = 150 W.
Fig.18 Power gain as a function of frequency;
typical values.
Product specification
BLF147
Rev. 06 - 5 December 2006
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