BLF244 데이터 시트보기 (PDF) - Philips Electronics
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BLF244 Datasheet PDF : 12 Pages
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Philips Semiconductors
VHF power MOS transistor
Product specification
BLF244
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 3 K/W; unless otherwise specified.
RF performance in CW operation in a common source class-B circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
GP
(dB)
CW, class-B
175 28 25 15 > 13
typ. 17
175 12.5 25 6 typ. 15
ηD
(%)
> 50
typ. 65
typ. 60
Zi
(Ω)
(note 1)
3.0 − j4.0
3.0 − j4.0
ZL
(Ω)
6.3 + j9.8
4.5 + j3.3
Note
1. R1 included.
Ruggedness in class-B operation
The BLF244 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under
the following conditions:
Th = 25 °C; Rth mb-h = 0.3 K/W; at rated load power.
R1
(Ω)
46.4//46.4
100
handbook,3h0alfpage
PL
(W)
20
MGP157
handbook,2h0alfpage
Gp
Gp
(dB)
ηD
10
MGP158
100
ηD
(%)
50
10
0
1
PIN (W)
2
Class-B operation; VDS = 28 V; IDQ = 25 mA;
f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.
Fig.9 Load power as a function of input power,
typical values.
0
0
0
10
20 PL (W) 30
Class-B operation; VDS = 28 V; IDQ = 25 mA;
f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.
Fig.10 Power gain and efficiency as functions of
load power, typical values.
September 1992
6
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