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BLF244

VHF power MOS transistor

Philips Electronics 

Philips Semiconductors

VHF power MOS transistor

Product specification

BLF244

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VDS

±VGS

ID

Ptot

Tstg

Tj

drain-source voltage

gate-source voltage

DC drain current

total power dissipation

storage temperature

junction temperature

up to Tmb = 25 °C

MIN.

−

−

−

−

−65

−

MAX. UNIT

65

V

20

V

3

A

38

W

150 °C

200 °C

THERMAL RESISTANCE

SYMBOL

Rth j-mb

Rth mb-h

PARAMETER

thermal resistance from

junction to mounting base

thermal resistance from

mounting base to heatsink

CONDITIONS

Tmb = 25 °C; Ptot = 38 W

Tmb = 25 °C; Ptot = 38 W

THERMAL RESISTANCE

4.6 K/W

0.3 K/W

handbook, 1h0alfpage

ID

(A)

(1)

1

MRA919

(2)

10−1

1

10

VDS (V)

102

(1) Current is this area may be limited by RDS(on).

(2) Tmb = 25 °C.

Fig.2 DC SOAR.

handbook,5h0alfpage

Ptot

(W)

40

(1)

30

(2)

20

MGP151

10

0

0

50

100 Th (°C) 150

(1) Short-time operation during mismatch.

(2) Continuous operation.

Fig.3 Power/temperature derating curves.

September 1992

3

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