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BLF244

VHF power MOS transistor

Philips Electronics 

Philips Semiconductors

VHF power MOS transistor

Product specification

BLF244

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

V(BR)DSS

IDSS

IGSS

VGS(th)

∆VGS

gfs

RDS(on)

IDSX

Cis

Cos

Crs

F

drain-source breakdown voltage

drain-source leakage current

gate-source leakage current

gate-source threshold voltage

gate-source voltage difference of

matched devices

forward transconductance

drain-source on-state resistance

on-state drain current

input capacitance

output capacitance

feedback capacitance

noise figure (see Fig. 13)

CONDITIONS

VGS = 0; ID = 5 mA

VGS = 0; VDS = 28 V

±VGS = 20 V; VDS = 0

ID = 5 mA; VDS = 10 V

ID = 5 mA; VDS = 10 V

MIN. TYP. MAX. UNIT

65 −

−

−

−

−

2

−

−

−

−

V

1

mA

1

µA

4.5 V

100 mV

ID = 0.75 A; VDS = 10 V

0.6 −

−

S

ID = 0.75 A; VGS = 10 V

−

0.8 1.5 Ω

VGS = 10 V; VDS = 10 V

−

5

−

A

VGS = 0; VDS = 28 V; f = 1 MHz

−

60 −

pF

VGS = 0; VDS = 28 V; f = 1 MHz

−

40 −

pF

VGS = 0; VDS = 28 V; f = 1 MHz

−

4.5 −

pF

ID = 0.5 A; VDS = 28 V; R1 = 23 Ω; −

4.3 −

dB

Th = 25 °C; f = 175 MHz;

Rth mb-h = 0.3 K/W

handbook, h2alfpage

T.C.

(mV/K)

0

MGP152

−2

−4

−6

−8

1

10

102

103

ID (mA)

VDS = 10 V; valid for Tj = 25 to 125 °C.

Fig.4 Temperature coefficient of gate-source

voltage as a function of drain current, typical

values.

handbook, h6alfpage

ID

(A)

4

MGP153

2

0

0

4

8

VDS = 10 V.

solid line: Tj = 25 °C.

dotted line: Tj = 125 °C.

12 VGS (V) 16

Fig.5 Drain current as a function of gate-source

voltage, typical values.

September 1992

4

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