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BLF244

VHF power MOS transistor

Philips Electronics 

Philips Semiconductors

VHF power MOS transistor

Product specification

BLF244

2

handbook, halfpage

RDS(on)

(Ω)

1

MGP154

0

0

40

80

120 Tj (°C) 160

VGS = 10 V; ID = 0.75 A.

Fig.6 Drain-source on-state resistance as a

function of junction temperature, typical

values.

160

handbook, halfpage

C

(pF)

120

MGP155

80

Cis

Cos

40

0

0

10

20

30

40

VDS (V)

VGS = 0; f = 1 MHz.

Fig.7 Input and output capacitance as functions

of drain-source voltage, typical values.

handbook,2h0alfpage

Crs

(pF)

10

MGP156

0

0

20

VDS (V)

40

VGS = 0; f = 1 MHz.

Fig.8 Feedback capacitance as a function of

drain-source voltage, typical values.

September 1992

5

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