ADG508F 데이터 시트보기 (PDF) - Analog Devices
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ADG508F Datasheet PDF : 12 Pages
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ADG508F/ADG509F/ADG528F–SPECIFICATIONS1
Dual Supply (VDD = +15 V ؎ 10%, VSS = –15 V ؎ 10%, GND = 0 V, unless otherwise noted)
Parameter
B Version
–40؇C to
+25؇C +85؇C
T Version
–55؇C to
+25؇C +125؇C
Units
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
RON
RON Drift
RON Match
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
Drain OFF Leakage ID (OFF)
ADG508F/ADG528F
ADG509F
Channel ON Leakage ID, IS (ON)
ADG508F/ADG528F
ADG509F
FAULT
Output Leakage Current
(With Overvoltage)
Input Leakage Current
(With Overvoltage)
Input Leakage Current
(With Power Supplies OFF)
VSS + 3
VSS + 3 V min
VDD – 1.5
VDD – 1.5 V max
300 350
300 400
Ω typ –10 V < VS < +10 V, IS = 1 mA;
VDD = +15 V ± 10%, VSS = –15 V ± 10%
400
450
Ω max –10 V < VS < +10 V, IS = 1 mA;
VDD = +15 V ± 5%, VSS = –15 V ± 5%
0.6
0.6
%/°C typ VS = 0 V, IS = 1 mA
5
5
% max VS = 0 V, IS = 1 mA
± 0.02
± 1 ± 50
± 0.04
± 1 ± 60
± 1 ± 30
± 0.04
± 1 ± 60
± 1 ± 30
± 0.02
±1
± 0.04
±1
±1
± 0.04
±1
±1
± 50
± 200
± 100
± 200
± 100
nA typ
nA max
nA typ
nA max
nA max
nA typ
nA max
nA max
VD = ± 10 V, VS = ϯ10 V;
Test Circuit 2
VD = ± 10 V, VS = ϯ10 V;
Test Circuit 3
VS = VD = ± 10 V;
Test Circuit 4
± 0.02
±2 ±2
± 0.005
±2
± 0.001
±2
± 0.02
±2
± 0.005
±2
± 0.001
±2
nA typ
µA max
µA typ
µA max
µA typ
µA max
VS = ± 33 V, VD = 0 V, Test Circuit 3
VS = ± 25 V, VD = ϯ10 V, Test Circuit 5
VS = ± 25 V, VD = VEN = A0, A1, A2 = 0 V
Test Circuit 6
DIGITAL INPUTS
Input High Voltage, VINH
2.4
Input Low Voltage, VINL
0.8
Input Current
IINL or IINH
±1
CIN, Digital Input Capacitance
5
DYNAMIC CHARACTERISTICS2
tTRANSITION
200
300 400
tOPEN
50
25
10
tON (EN, WR)
200
250 400
tOFF (EN, RS)
200
250 400
tSETT, Settling Time
0.1%
1
0.01%
2.5
ADG528F Only
tW, Write Pulsewidth
100 120
tS, Address, Enable Setup Time
100
tH, Address, Enable Hold Time
10
tRS, Reset Pulsewidth
100
Charge Injection
4
OFF Isolation
68
50
CS (OFF)
5
CD (OFF)
ADG508F/ADG528F
50
ADG509F
25
2.4
0.8
±1
5
200
300 400
50
25
10
200
250 400
200
250 400
1
2.5
100 200
100
10
100
4
68
50
5
50
25
V min
V max
µA max VIN = 0 or VDD
pF typ
ns typ
ns max
ns typ
ns min
ns typ
ns max
ns typ
ns max
µs typ
µs typ
ns min
ns min
ns min
ns min
pC typ
dB typ
dB min
pF typ
RL = 1 MΩ, CL = 35 pF;
VS1 = ± 10 V, VS8 = ϯ10 V; Test Circuit 7
RL = 1 kΩ, CL = 35 pF;
VS = +5 V; Test Circuit 8
RL = 1 kΩ, CL = 35 pF;
VS = +5 V; Test Circuit 9
RL = 1 kΩ, CL = 35 pF;
VS = +5 V; Test Circuit 9
RL = 1 kΩ, CL = 35 pF;
VS = +5 V
VS = 0 V, RS = 0 Ω, CL= 1 nF; Test Circuit 12
RL = 1 kΩ, CL = 15 pF, f = 100 kHz;
VS = 7 V rms; Test Circuit 13
pF typ
pF typ
POWER REQUIREMENTS
IDD
ISS
0.1 0.2
0.1 0.1
0.1 0.2
0.1 0.1
mA max VIN = 0 V or 5 V
mA max
NOTES
1Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. C
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