RB521S30,135 데이터 시트보기 (PDF) - NXP Semiconductors.
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RB521S30,135 Datasheet PDF : 12 Pages
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NXP Semiconductors
RB521S30
200 mA low VF MEGA Schottky barrier rectifier
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig 12. Duty cycle definition
The current ratings for the typical waveforms as shown in Figure 8, 9 and 10 are
calculated according to the equations: IF(AV ) = I M × δ with IM defined as peak current,
I RMS = IF(AV ) at DC, and I RMS = I M × δ with IRMS defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
0.85
0.65
0.75
0.58
1
1.65 1.25
1.55 1.15
Dimensions in mm
2
0.34
0.26
Fig 13. Package outline SOD523 (SC-79)
0.17
0.11
02-12-13
RB521S30_1
Product data sheet
Rev. 01 — 6 October 2009
© NXP B.V. 2009. All rights reserved.
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