RB521S30,135 데이터 시트보기 (PDF) - NXP Semiconductors.
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RB521S30,135 Datasheet PDF : 12 Pages
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NXP Semiconductors
RB521S30
200 mA low VF MEGA Schottky barrier rectifier
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Tj
junction temperature
-
Tamb
ambient temperature
−55
Tstg
storage temperature
−65
Max Unit
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[2] Tj = 25 °C prior to surge.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
Rth(j-sp)
thermal resistance from
junction to solder point
Min Typ Max Unit
[1][2]
[3] -
-
455 K/W
[4] -
-
300 K/W
[5] -
-
250 K/W
[6] -
-
90 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6] Soldering point of cathode tab.
RB521S30_1
Product data sheet
Rev. 01 — 6 October 2009
© NXP B.V. 2009. All rights reserved.
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