RB521S30,135 데이터 시트보기 (PDF) - NXP Semiconductors.
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RB521S30,135 Datasheet PDF : 12 Pages
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NXP Semiconductors
RB521S30
200 mA low VF MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1] The marking bar indicates the cathode.
3. Ordering information
Simplified outline
[1]
1
2
Graphic symbol
1
2
sym001
Table 3. Ordering information
Type number
Package
Name
Description
RB521S30
SC-79
plastic surface-mounted package; 2 leads
Version
SOD523
4. Marking
Table 4. Marking codes
Type number
RB521S30
Marking code
ZB
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
VR
reverse voltage
Tj = 25 °C
-
IF(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
Tamb ≤ 120 °C
[1] -
Tsp ≤ 140 °C
-
IFSM
non-repetitive peak
tp = 8.3 ms
[2] -
forward current
half sine wave;
JEDEC method
Ptot
total power dissipation Tamb ≤ 25 °C
[3][4] -
[3][1] -
[3][5] -
Max Unit
30
V
0.2
A
0.2
A
1
A
275
mW
420
mW
500
mW
RB521S30_1
Product data sheet
Rev. 01 — 6 October 2009
© NXP B.V. 2009. All rights reserved.
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