RB521S30,135 데이터 시트보기 (PDF) - NXP Semiconductors.
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RB521S30,135 Datasheet PDF : 12 Pages
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NXP Semiconductors
RB521S30
200 mA low VF MEGA Schottky barrier rectifier
7. Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
VF
forward voltage
[1]
IF = 0.1 mA
-
130 190 mV
IF = 1 mA
-
190 250 mV
IF = 10 mA
-
255 300 mV
IF = 100 mA
-
355 410 mV
IF = 200 mA
-
420 500 mV
IR
reverse current
VR = 10 V
-
2.5 30
µA
Cd
diode capacitance
f = 1 MHz; VR = 1 V
-
20
25
pF
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
10
IF
(A)
1
(1)
(2)
10−1
006aab712
10−2
10−3
(3) (4) (5)
10−4
0.0
0.2
0.4
0.6
0.8
1.0
VF (V)
(1) Tj = 150 °C
(2) Tj = 125 °C
(3) Tj = 85 °C
(4) Tj = 25 °C
(5) Tj = −40 °C
Fig 3. Forward current as a function of forward
voltage; typical values
10−2
IR
(A)
10−3
10−4
10−5
10−6
10−7
10−8
10−9
0
(1)
(2)
(3)
(4)
10
(1) Tj = 125 °C
(2) Tj = 85 °C
(3) Tj = 25 °C
(4) Tj = −40 °C
006aab713
20
30
VR (V)
Fig 4. Reverse current as a function of reverse
voltage; typical values
RB521S30_1
Product data sheet
Rev. 01 — 6 October 2009
© NXP B.V. 2009. All rights reserved.
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