SST38VF166-70-4C-EK 데이터 시트보기 (PDF) - Silicon Storage Technology
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SST38VF166-70-4C-EK Datasheet PDF : 50 Pages
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16 Megabit FlashBank Memory
SST38VF166
Data Sheet
TABLE 4: OPERATION MODES SELECTION FOR FLASH BANK
Array Operation Mode
BE#1 BE#2 BE#3 OE# WE# DQ
Address
Read
Flash Bank 1
Flash Bank 2
Block-Erase
VIL
VIH
VIH
VIL
VIH DOUT
AIN
VIH
VIL
VIH
VIL
VIH DOUT
AIN
Flash Bank 1
Flash Bank 2
Sector-Erase
VIL
VIH
VIH
VIH
VIL DIN
VIH
VIL
VIH
VIH
VIL DIN
See Tables 6 and 7
See Tables 6 and 7
Flash Bank 1
Flash Bank 2
Program
VIL
VIH
VIH
VIH
VIL DIN
VIH
VIL
VIH
VIH
VIL DIN
See Tables 6 and 7
See Tables 6 and 7
Flash Bank 1
Flash Bank 2
Standby
Write Inhibit
VIL
VIH
VIH
VIH
VIL DIN
See Tables 6 and 7
VIH
VIL
VIH
VIH
VIL DIN
See Tables 6 and 7
VIH
VIH
VIH
X
X High Z X
Flash Bank 1
Flash Bank 2
Flash Bank-Erase
VIH
X
X
VIL
VIH X
X
X
VIH
X
VIL
VIH X
X
Flash Bank 1
Flash Bank 2
VIL
VIH
VIH
VIH
VIL DIN
VIH
VIL
VIH
VIH
VIL DIN
See Tables 6 and 7
See Tables 6 and 7
Status Operation Mode
Write Status Read
Illegal State
Illegal State
Illegal State
Illegal State
Product Identification
BE#1
VIH
VIL
VIL
VIL
X
BE#2
VIH
VIL
VIL
X
VIL
BE#3
VIL
VIL
X
VIL
VIL
OE#
VIL
X
X
X
X
WE#
VIH
X
X
X
X
DQ
DOUT1
High Z
High Z
High Z
High Z
Address
5XXXXH
X2
X2
X2
X2
Flash Bank 1
Flash Bank 2
Common Flash Interface
VIL
VIH
VIH
VIL
VIH DOUT
See Tables 6 and 7
VIH
VIL
VIH
VIL
VIH DOUT
See Tables 6 and 7
Flash Bank 1
VIL
VIH
VIH
VIL
VIH DOUT
See Tables 6 and 7
Flash Bank 2
VIH
VIL
VIH
VIL
VIH DOUT
See Tables 6 and 7
T4.5 327
1. If Flash Bank 1 is writing, DQ1 is low. If Flash Bank 2 is writing, DQ2 is low. If E2 Bank is writing, DQ3 is low.
2. Entering an illegal state during an Erase, Program, or Write operation will not affect the operation, i.e., the erase, program, or write
will continue to normal completion.
©2001 Silicon Storage Technology, Inc.
9
327-3 2/01
S71065
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