SST38VF166-70-4C-EK 데이터 시트보기 (PDF) - Silicon Storage Technology

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SST38VF166-70-4C-EK

16 Megabit FlashBank Memory

Silicon Storage Technology 

16 Megabit FlashBank Memory

SST38VF166

Data Sheet

A15

1

A14

2

A13

3

A12

4

A11

5

A10

6

A9

7

A8

8

NC

9

NC

10

WE#

11

NC

12

BE#2

13

NC

14

BE#3

15

A18

16

A17

17

A7

18

A6

19

A5

20

A4

21

A3

22

A2

23

A1

24

Standard Pinout

Top View

Die Up

48

A16

47

NC

46

VSS

45

DQ15

44

DQ7

43

DQ14

42

DQ6

41

DQ13

40

DQ5

39

DQ12

38

DQ4

37

VDD

36

DQ11

35

DQ3

34

DQ10

33

DQ2

32

DQ9

31

DQ1

30

DQ8

29

DQ0

28

OE#

27

VSS

26

BE#1

25

A0

327 ILL F01b.5

FIGURE 1: PIN ASSIGNMENTS FOR 48-PIN TSOP (12MM X 20MM)

TABLE 3: PIN DESCRIPTION

Symbol Name

Functions

A18-A0

A11-A0

A18-A15

A18-A10

A11-A5

DQ15-DQ0

Flash Bank Addresses

E2 Bank Addresses

Flash Bank Block Addresses

Flash Bank Sector Addresses

E2 Bank Sector Addresses

Data Input/output

To provide Flash Bank addresses

To provide E2 Bank addresses

To select a Flash Bank Block for erase

To select a Flash Bank Sector for erase

To select an E2 Bank Sector for erase

To output data during Read cycles and receive input data during Write cycles.

Data is internally latched during a Write cycle.

The outputs are in tri-state when OE# is high or BE#1, BE#2, and BE#3 are high.

OE#

Output Enable

To gate the data output buffers

WE#

Write Enable 1

To control the Write, Erase, or Program operations

VDD

Power Supply

VSS

Ground

NC

No Connect

To provide 2.7-3.6V power supply

Unconnected pins

T3.4 327

©2001 Silicon Storage Technology, Inc.

8

327-3 2/01

S71065

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