BLF245 데이터 시트보기 (PDF) - NXP Semiconductors.
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BLF245 Datasheet PDF : 16 Pages
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Philips Semiconductors
VHF power MOS transistor
Product specification
BLF245
handbook,2h0alfpage
Gp
(dB)
Gp
ηD
10
MGP172
100
ηD
(%)
50
0
0
10
20
30
40
50
PL (W)
Class-B operation; VDS = 28 V; IDQ = 50 mA;
f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.
Fig.9 Power gain and efficiency as functions of
load power; typical values.
60
handbook, halfpage
PL
(W)
50
40
MEA736
30
20
10
0
0.6
1.2
1.8
2.4
PIN (W)
Class-B operation; VDS = 28 V; IDQ = 50 mA;
f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.
Fig.10 Load power as a function of input power;
typical values.
handbook,2h0alfpage
Gp
(dB)
10
MGP173
100
ηD
(%)
ηD
Gp
50
handbook,2h0alfpage
PL
(W)
10
MEA737
0
0
0
10
PL (W)
20
Class-B operation; VDS = 12.5 V; IDQ = 50 mA;
f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.
Fig.11 Power gain and efficiency as functions of
load power; typical values.
0
0
0.6
1.2
1.8
2.4
PIN (W)
Class-B operation; VDS = 12.5 V; IDQ = 50 mA;
f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.
Fig.12 Load power as a function of input power;
typical values.
2003 Sep 02
7
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