Philips Semiconductors
VHF power MOS transistor
20
handbook, halfpage
Crs
(pF)
10
MRA920
Product specification
BLF245
0
0
10
20
30
VDS (V)
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage; typical values.
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 0.3 K/W; R1 = 1 kΩ.
RF performance in CW operation in a common source class-B test circuit.
MODE OF OPERATION
CW, class-B
f
(MHz)
175
175
VDS
(V)
28
12.5
IDQ
(mA)
50
50
PL
Gp
(W) (dB)
30
>13
typ. 15.5
12 typ. 12
Note
1. R1 included.
ηD
(%)
< 50
typ. 67
typ. 66
Zi
(Ω)(1)
2.0 − j2.7
2.4 − j2.5
ZL
(Ω)
3.9 + j4.4
3.8 + j1.3
Ruggedness in class-B operation
The BLF245 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the
following conditions: Th = 25 °C; Rth mb-h = 0.3 K/W; at rated load power.
2003 Sep 02
6