BLF245 데이터 시트보기 (PDF) - NXP Semiconductors.
부품명
상세내역
일치하는 목록
BLF245 Datasheet PDF : 16 Pages
| |||
Philips Semiconductors
VHF power MOS transistor
Product specification
BLF245
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)DSS
IDSS
IGSS
VGSth
∆VGS
gfs
RDSon
IDSX
Cis
Cos
Crs
F
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
matched devices
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
noise figure
CONDITIONS
VGS = 0; ID = 10 mA
VGS = 0; VDS = 28 V
VGS = ±20 V; VDS = 0
ID = 10 mA; VDS = 10 V
ID = 0 mA; VDS = 10 V
ID = 1.5 A; VDS = 10 V
ID = 1.5 A; VGS = 10 V
VGS = 10 V; VDS = 10 V
VGS = 0; VDS = 28 V; f = 1 MHz
VGS = 0; VDS = 28 V; f = 1 MHz
VGS = 0; VDS = 28 V; f = 1 MHz
input and output power matched for:
ID = 1 A; VDS = 28 V; PL = 30 W;
R1 = 1 kΩ; Th = 25 °C; f = 175 MHz;
see Fig.14
MIN. TYP. MAX. UNIT
65 −
−
V
−
−
2
mA
−
−
1
µA
2
−
4.5 V
−
−
100 mV
1.2 1.9 −
S
−
0.4 0.75 Ω
−
10 −
A
−
125 −
pF
−
75 −
pF
−
7
−
pF
−
2
−
dB
VGS group indicator
GROUP
A
B
C
D
E
F
G
H
J
K
L
M
N
MIN.
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
LIMITS
(V)
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
GROUP
O
P
Q
R
S
T
U
V
W
X
Y
Z
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
LIMITS
(V)
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
2003 Sep 02
4
Share Link: 