BLF245 데이터 시트보기 (PDF) - NXP Semiconductors.

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BLF245

VHF power MOS transistor

NXP Semiconductors. 

Philips Semiconductors

VHF power MOS transistor

Product specification

BLF245

FEATURES

• High power gain

• Low noise figure

• Easy power control

• Good thermal stability

• Withstands full load mismatch.

DESCRIPTION

Silicon N-channel enhancement

mode vertical D-MOS transistor

designed for large signal amplifier

applications in the VHF frequency

range.

The transistor is encapsulated in a

4-lead SOT123A flange package,

with a ceramic cap. All leads are

isolated from the flange.

Matched gate-source voltage (VGS)

groups are available on request.

PIN CONFIGURATION

lfpage

1

2

4

d

g

MBB072 s

3

MSB057

Fig.1 Simplified outline and symbol.

CAUTION

This product is supplied in anti-static packing to prevent damage caused by

electrostatic discharge during transport and handling. For further information,

refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

PINNING - SOT123A

PIN

DESCRIPTION

1 drain

2 source

3 gate

4 source

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided

that the BeO disc is not damaged. All persons who handle, use or dispose of

this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to

the regulations applying at the location of the user. It must never be thrown

out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at Th = 25 °C in a class-B test circuit.

MODE OF OPERATION

f

VDS

PL

Gp

ηD

(MHz)

(V)

(W)

(dB)

(%)

CW, class-B

175

28

30

>13

>50

2003 Sep 02

2

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