SKW30N60HS(2008) 데이터 시트보기 (PDF) - Infineon Technologies

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SKW30N60HS
(Rev.:2008)

High Speed IGBT in NPT-technology

Infineon Technologies 

SKW30N60HS

5,0mJ

4,0mJ

*) Eon and Ets include losses

due to diode recovery

3,0mJ

Eon*

2,0mJ

1,0mJ

Eoff

0,0mJ

0A 10A 20A 30A 40A 50A 60A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ=150°C,

VCE=400V, VGE=0/15V, RG=11Ω,

Dynamic test circuit in Figure E)

3,0 mJ

*) Eon and Ets include losses

due to diode recovery

2,5 mJ

2,0 mJ

1,5 mJ Ets*

1,0 mJ Eon*

0,5 mJ

Eoff

0,0 mJ

0Ω

5Ω 10Ω 15Ω 20Ω 25Ω 30Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ=150°C,

VCE=400V, VGE=0/15V, IC=30A,

Dynamic test circuit in Figure E)

*) Eon and Ets include losses

due to diode recovery

1,5mJ

Ets*

1,0mJ

Eon*

Eoff

0,5mJ

0,0mJ

0°C

50°C

100°C

150°C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, VCE=400V,

VGE=0/15V, IC=30A, RG=11Ω,

Dynamic test circuit in Figure E)

D=0.5

10-1K/W 0.2

0.1

0.05

10-2K/W 0.02

0.01

10-3K/W

R,(K/W)

0.3681

0.0938

0.038

τ, (s)

0.0555

1.26E-03

1.49E-04

R1

R2

single pulse

10-4K/W

1µs

10µs 100µs

C1=τ1/R1 C2=τ2/R2

1ms 10ms 100ms

tP, PULSE WIDTH

Figure 16. IGBT transient thermal resistance

(D = tp / T)

Power Semiconductors

8

Rev. 2.2 Sep 08

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