SKW30N60HS(2008) 데이터 시트보기 (PDF) - Infineon Technologies
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SKW30N60HS Datasheet PDF : 14 Pages
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SKW30N60HS
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=150°C
VCC=400V,IC=30A,
VGE=0/15V,
RG= 1.8Ω
Lσ1) =60nH,
Cσ1) =40pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=150°C
VCC=400V,IC=30A,
VGE=0/15V,
RG= 11Ω
Lσ1) =60nH,
Cσ1) =40pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
16
13
122
29
0.78
0.48
1.26
20
19
274
27
0.91
0.70
1.61
Unit
max.
ns
mJ
ns
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
Tj=150°C
-
190
tS
VR=400V, IF=30A,
-
30
tF
diF/dt=1250A/µs
-
160
Diode reverse recovery charge
Qrr
-
2.0
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t b
Irrm
dirr/dt
-
24
-
480
ns
µC
A
A/µs
1) Leakage inductance L σ a nd Stray capacity C σ due to test circuit in Figure E.
Power Semiconductors
4
Rev. 2.2 Sep 08
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