SKW30N60HS(2008) 데이터 시트보기 (PDF) - Infineon Technologies

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SKW30N60HS
(Rev.:2008)

High Speed IGBT in NPT-technology

Infineon Technologies 

SKW30N60HS

td(off)

100ns

tf

td(on)

10ns

0A

tr

10A 20A 30A 40A 50A

IC, COLLECTOR CURRENT

Figure 9. Typical switching times as a

function of collector current

(inductive load, TJ=150°C,

VCE=400V, VGE=0/15V, RG=11Ω,

Dynamic test circuit in Figure E)

td(off)

100 ns

tf

td(on)

10 ns tr

0Ω

5Ω

10Ω 15Ω 20Ω 25Ω

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ=150°C,

VCE=400V, VGE=0/15V, IC=30A,

Dynamic test circuit in Figure E)

td(off)

100ns

tf

tr

td(on)

10ns

0°C

50°C

100°C

150°C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE=400V,

VGE=0/15V, IC=30A, RG=11Ω,

Dynamic test circuit in Figure E)

5,5V

5,0V

4,5V

4,0V

3,5V

3,0V

max.

2,5V

typ.

2,0V

1,5V

min.

1,0V

-50°C

0°C

50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(IC = 0.7mA)

Power Semiconductors

7

Rev. 2.2 Sep 08

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