SKW30N60HS(2008) 데이터 시트보기 (PDF) - Infineon Technologies

부품명

상세내역

일치하는 목록

SKW30N60HS
(Rev.:2008)

High Speed IGBT in NPT-technology

Infineon Technologies 

SKW30N60HS

Thermal Resistance

Parameter

Characteristic

IGBT thermal resistance,

junction – case

Diode thermal resistance,

junction – case

Thermal resistance,

junction – ambient

Symbol

RthJC

RthJCD

RthJA

Conditions

Max. Value

Unit

0.5

K/W

1.29

40

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Static Characteristic

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Diode forward voltage

Gate-emitter threshold voltage

Zero gate voltage collector current

Gate-emitter leakage current

Transconductance

V(BR)CES

VCE(sat)

VF

VGE(th)

ICES

IGES

gfs

VGE=0V, IC=500µA

VGE = 15V, IC=30A

Tj=25°C

Tj=150°C

VGE=0V, IF=30A

Tj=25°C

Tj=150°C

IC=700µA,VCE=VGE

VCE=600V,VGE=0V

Tj=25°C

Tj=150°C

VCE=0V,VGE=20V

VCE=20V, IC=30A

min.

600

-

3

-

-

-

-

Value

Typ.

-

2.8

3.5

1.55

1.55

4

-

-

-

20

Unit

max.

-V

3.15

4.00

2.05

2.05

5

µA

40

3000

100 nA

S

Dynamic Characteristic

Input capacitance

Output capacitance

Reverse transfer capacitance

Ciss

Coss

Crss

VCE=25V,

VGE=0V,

f=1MHz

-

1500

pF

-

203

-

92

Gate charge

QGate

VCC=480V, IC=30A

-

141

nC

VGE=15V

Internal emitter inductance

LE

-

13

nH

measured 5mm (0.197 in.) from case

Short circuit collector current1)

IC(SC)

VGE=15V,tSC≤10µs

-

220

A

VCC ≤ 600V,

Tj ≤ 150°C

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors

2

Rev. 2.2 Sep 08

Share Link: