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VSMB3940X01(2010) 데이터시트 - Vishay Semiconductors

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VSMB3940X01

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  2009   lastest PDF  

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6 Pages

File Size
136 kB

제조사
Vishay
Vishay Semiconductors Vishay

DESCRIPTION
VSMB3940X01 is an infrared, 940 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a PLCC-2 package for surface mounting (SMD).


FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching with Si photodetectors
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering acc. J-STD-020
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
   accordance to WEEE 2002/96/EC
• Find out more about Vishay’s Automotive Grade Product
   requirements at: www.vishay.com/applications


APPLICATIONS
• IrDA compatible data transmission
• Miniature light barrier
• Photointerrupters
• Optical switch
• Control and drive circuits
• Shaft encoders


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제조사
High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero ( Rev : 2014 )
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High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero
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High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero
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High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero ( Rev : 2009 )
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High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero ( Rev : 2009 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
Vishay Semiconductors

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