DESCRIPTION
TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: λp = 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: φ = ± 38°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching with Si photodetectors
• Compliant to RoHS Directive 2002/95/EC and in
   accordance to WEEE 2002/96/EC

APPLICATIONS
• Infrared video data transmission between camcorder and
   TV set
• Free air data transmission systems with high data
   transmission rates