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UL6264ADG25 데이터시트 - Zentrum Mikroelektronik Dresden AG

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UL6264ADG25

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제조사
Zentrum
Zentrum Mikroelektronik Dresden AG Zentrum

Description
The UL6264A is a static RAM manufactured using a CMOS process technology with the following operating modes:
    - Read - Standby
    - Write - Data Retention
The memory array is based on a 6-transistor cell.


FEATUREs
❐ 8192 x 8 bit static CMOS RAM
❐ 250 and 500 ns Access Times
❐ Common data inputs and data outputs
❐ Three-state outputs
❐ Typ. operating supply current: 250 ns: 12 mA 500 ns: 7 mA
❐ Standby current < 5 µA
❐ Standby current at 25 °C and 3.3 V: typ. 50 nA
❐ TTL/CMOS-compatible
❐ Automatic reduction of power dissipation in long Read or Write cycles
❐ Power supply voltage 3.3 V
❐ Operating temperature ranges 0 to 70 °C -25 to 85 °C -40 to 85 °C
❐ Quality assessment according to CECC 90000, CECC 90100 and CECC 90111
❐ ESD protection > 2000 V (MIL STD 883C M3015.7)
❐ Latch-up immunity > 100 mA
❐ Packages: PDIP28(600 mil) SOP28 (330 mil)

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제조사
Automotive 8K x 8 SRAM
Zentrum Mikroelektronik Dresden AG
Fast 8K x 8 SRAM
Zentrum Mikroelektronik Dresden AG
8K X 8 CMOS SRAM
ROHM Semiconductor
Standard 8K x 8 SRAM
Zentrum Mikroelektronik Dresden AG
8K X 8 BIT LOW POWER CMOS SRAM
Unspecified
8K X 8 BIT LOW POWER CMOS SRAM
Utron Technology Inc
8K X 8 BIT LOW POWER CMOS SRAM
Utron Technology Inc
8K X 8-Bit CMOS SRAM
Hyundai Micro Electronics
8K X 8 BIT LOW POWER CMOS SRAM
Alliance Semiconductor
8K X 8 BIT LOW POWER CMOS SRAM
Utron Technology Inc

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