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UD61464DC08 데이터시트 - Zentrum Mikroelektronik Dresden AG

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UD61464DC08

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14 Pages

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Zentrum
Zentrum Mikroelektronik Dresden AG Zentrum

Description
Addressing
The UD61466 is a dynamic random access memory organized 65536 words by 4 bits.
SCM facilitates faster data operation with predefined row address. Via 8 address inputs the 16 address bits are transmitted into the internal address memories in a time-multiplex operation.


FEATUREs
❐ Dynamic random access memory 65536 x 4 bits manufactured using a CMOS technology
❐ RAS access times 70 ns/80 ns
❐ TTL-compatible
❐ Three-state outputs bidirectional
❐ 256 refresh cycles 4 ms refresh cycle time
❐ STATIC COLUMN MODE
❐ Operating modes: Read, Write, Read - Write, RAS only Refresh, Hidden Refresh with address transfer
❐ Low power dissipation
❐ Power supply voltage 5 V
❐ Package PDIP18 (300 mil)
❐ Operating temperature range 0 to 70 °C
❐ Quality assessment according to CECC 90000, CECC 90100 and CECC 90112

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제조사
64K x 4 DRAM
Zentrum Mikroelektronik Dresden AG
64k x 16 Embedded EDO DRAM
G-Link Technology
4 MEG x 4 DRAM
Micron Technology
64K X 16 DRAM FAST PAGE MODE
Unspecified
64K WORD X 16 BIT EDO DRAM
Utron Technology Inc
4 MEG x 4 FPM DRAM
Micron Technology
4 MEG x 4 EDO DRAM
Micron Technology
1 MEG x 4 DRAM
Micron Technology
1 MEG x 4 DRAM Fast Page Mode DRAM
Austin Semiconductor
1 MEG x 4 DRAM Fast Page Mode DRAM
Austin Semiconductor

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