TPM2323-30 데이터시트 - Toshiba
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TPM2323-30
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Toshiba
High Power GaAs FETs (L, S-Band)
FEATUREs
• High power
- P1dB = 44.5 dBm at 2.3 GHz
• High gain
- G1dB = 11.5 dB at 2.3 GHz
• Partially matched type
• Hermetically sealed package
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