TPM2323-30 데이터 시트보기 (PDF) - Toshiba

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TPM2323-30

MICROWAVE POWER GaAs FET

Toshiba 

TPM2323-30

Absolute Maximum Ratings (Ta = 25° C)

Characteristic

Symbol

Drain Source Voltage

VDS

Gate Source Voltage

VGS

Drain Current

ID

Total Power Dissipation (Tc = 25°C)

PT

Channel Temperature

Tch

Storage Temperature

Tstg

Package Outline (2-16G1B)

Unit

Rating

V

15

V

-5

A

26

W

100

˚C

175

˚C

-65~175

Handling Precautions for Packaged Type

Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C.

2/5

MW40040196

TOSHIBA CORPORATION

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