TJ10S04M3L 데이터시트 - Toshiba
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TJ10S04M3L
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Toshiba
Features
(1) AEC-Q101 qualified
(2) Low drain-source on-resistance: RDS(ON) = 33.8 mΩ (typ.) (VGS = -10 V)
(3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)
(4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)
APPLICATIONs
• Automotive
• Motor Drivers
• DC-DC Converters
• Switching Voltage Regulators
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