J11A10M3 데이터시트 - Toshiba
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J11A10M3
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Toshiba
Features
(1) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ.) (VGS = -10 V)
(2) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V)
(3) Enhancement mode: Vth = -2.0 to -4.0 V (VDS = -10 V, ID = -1 mA)
APPLICATIONs
• Switching Voltage Regulators
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