Description
The device in manufactured in low voltage PNP planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

FEATUREs
■ Very low collector to emitter saturation voltage
■ DC current gain, hFE > 100
■ 3 A continuous collector current
■ 40 V breakdown voltage V(BR)CER

APPLICATIONs
■ Power management in portable equipment
■ Voltage regulation in bias supply circuits
■ Switching regulator in battery charger applications
■ Heavy load driver