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STMicroelectronics
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Description
The device in manufactured in low voltage PNP planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
FEATUREs
■ Very low collector to emitter saturation voltage
■ DC current gain, hFE >100
■ 3 A continuous collector current
■ 40 V breakdown voltage V(BR)CER
■ SOT-223 plastic package for surface mounting circuits in tape and reel packing
APPLICATIONs
■ Power management in portable equipment
■ Voltage regulation in bias supply circuits
■ Switching regulator in battery charger applications
■ Heavy load driver
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