STW13N80K5 데이터시트 - STMicroelectronics
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STW13N80K5
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STMicroelectronics
Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
FEATUREs
● Industry’s lowest RDS(on) x area
● Industry’s best FoM (figure of merit)
● Ultra-low gate charge
● 100% avalanche tested
● Zener-protected
APPLICATIONs
● Switching applications
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제조사
N-channel 800 V, 0.3 Ω typ., 14 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages
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