STB20N95K5(2012) 데이터시트 - STMicroelectronics
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STB20N95K5
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page
22 Pages
File Size
1.1 MB
제조사
STMicroelectronics
Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
FEATUREs
• Industry’s lowest RDS(on) x area
• Industry’s best FoM (figure of merit)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
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제조사
N-channel 800 V, 0.37 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247
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