STP18NM80 데이터시트 - STMicroelectronics
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STP18NM80
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STMicroelectronics
Description
These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the companys PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST’s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATION
■ Switching applications
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제조사
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