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STP18NM80

N-channel 800 V, 0.25 Ω, 17 A, MDmesh™ Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages

STMicroelectronics 

STB18NM80, STF18NM80,

STP18NM80, STW18NM80

N-channel 800 V, 0.25 Ω, 17 A, MDmesh™ Power MOSFET

in D²PAK, TO-220FP, TO-220 and TO-247 packages

Datasheet — production data

Features

Order codes

VDSS

RDS(on)

max

ID

STB18NM80

STF18NM80

STP18NM80

STW18NM80

800 V

800 V

800 V

800 V

< 0.295 Ω

< 0.295 Ω

< 0.295 Ω

< 0.295 Ω

17 A

17 A (1)

17 A

17 A

1. Limited only by maximum temperature allowed

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Application

■ Switching applications

Description

These N-channel Power MOSFETs are

developed using STMicroelectronics’

revolutionary MDmesh™ technology, which

associates the multiple drain process with the

company's PowerMESH™ horizontal layout.

These devices offer extremely low on-resistance,

high dv/dt and excellent avalanche

characteristics. Utilizing ST’s proprietary strip

technique, these Power MOSFETs boast an

overall dynamic performance which is superior to

similar products on the market.

3

1

D²PAK

3

2

1

TO-220FP

3

2

1

TO-220

3

2

1

TO-247

Figure 1. Internal schematic diagram

$

'

3

!-V

Table 1. Device summary

Order codes

STB18NM80

STF18NM80

STP18NM80

STW18NM80

Marking

18NM80

Package

D²PAK

TO-220FP

TO-220

TO-247

Packaging

Tape and reel

Tube

May 2012

This is information on a product in full production.

Doc ID 15421 Rev 5

1/21

www.st.com

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