STI260N6F6 데이터시트 - STMicroelectronics
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STI260N6F6
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STMicroelectronics
STI260N6F6STI260N6F6
Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
FEATUREs
■ Low gate charge
■ Very low on-resistance
■ High avalanche ruggedness
APPLICATION
■ Switching applications
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