STD150N3LLH6 데이터시트 - STMicroelectronics
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STD150N3LLH6
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STMicroelectronics
Description
This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest R DS(on) in all packages.
FEATUREs
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ High avalanche ruggedness
■ Low gate drive power losses
APPLICATION
■ Switching applications
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제조사
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