SB157 데이터시트 - Transys Electronics Limited
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SB157
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제조사
Transys Electronics Limited
Features
Oxide Passivated Junction
Very Low Forward Voltage
125 º C Junction Operating
Low Reverse Leakage
Supplied as Wafers
Chromium Barrier
>1000V ESD (MM)
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제조사
Schottky cr Barrier Diode Wafer 157 x 106 Mils, 25 Volt, 20 Amp, 0.39VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 60 Mils, 20 Volt, 3 Amp, 0.38VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 65 Mils, 25 Volt, 3 Amp, 0.38VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 1 Amp, 0.36VF.
Transys Electronics Limited
Schottky Barrier Diode Wafer 106 Mils, 200 Volt, 10 Amp
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 65 Mils, 15 Volt, 2 Amp, 0.32VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 1 Amp, 0.35VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 51 Mils, 15 Volt, 1 Amp, 0.30VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 0.5 Amp, 0.32VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 1 Amp, 0.36VF.
Transys Electronics Limited
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