SB106P125-W-AG/AL 데이터시트 - Transys Electronics Limited
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SB106P125-W-AG/AL
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제조사
Transys Electronics Limited
Features
Oxide Passivated Junction
Low Forward Voltage
150 º C Junction Operating
Low Reverse Leakage
Supplied as Wafers
Platinum Barrier
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제조사
Schottky Barrier Diode Wafer 106 Mils, 200 Volt, 10 Amp
Transys Electronics Limited
Schottky Barrier Diode Wafer 51 Mils, 200 Volt, 2 Amp
Transys Electronics Limited
Schottky Barrier Diode Wafer 40 Mils, 200 Volt, 1 Amp
Transys Electronics Limited
Schottky Barrier Diode Wafer 106x138 Mils, 200 Volt, 15 Amp
Transys Electronics Limited
Schottky Barrier Diode Wafer 90 Mils, 200 Volt, 8 Amp
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Schottky cr Barrier Diode Wafer 157 x 106 Mils, 25 Volt, 20 Amp, 0.39VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 157 x 106 Mils, 15 Volt, 30 Amp, 0.38VF.
Transys Electronics Limited
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