Description
The RMBA09501A is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon RF Components’ pHEMT process. It is designed for use as a driver stage for Cellular base stations, or as the output stage for Micro- and Pico-Cell base stations. The amplifier has been optimized for high linearity requirements for CDMA operation.

FEATUREs
◆ 2 Watt Linear output power at 36 dBc ACPR1 for CDMA operation
◆ OIP3 ≥43 dBc at 27 and 30 dBm power output
◆ Small Signal Gain of > 30 dB
◆ Small outline SMD package