Description
The RMBA09501 is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon’s pHEMT process. It is designed for use as a driver stage for Cellular base stations, or as the output stage for Micro- and Pico-Cell base stations. The amplifier has been optimized for high linearity requirements for CDMA operation. The device is matched for 50 ohms input impedance.
FEATUREs
◆ 2 Watt Linear output power at 37 dBc ACPR1 for CDMA operation
◆ Small Signal Gain of > 30 dB
◆ Small outline SMD package