The RLP1N08LE is a semi-smart monolithic power circuit which incorporates a lateral bipolar transistor, two resistors, a zener diode, and a PowerMOS transistor. Good control of the current limiting levels allows use of these devices where a shorted load condition may be encountered. “Logic level” gates allow this device to be fully biased on with only 5V from gate to source. The zener diode provides ESD protection up to 2kV. These devices can be produced on the standard PowerMOS production line.
Formerly developmental type TA09842.

FEATUREs
• 1A, 80V
• rDS(ON) = 0.750Ω
• ILIMIT at 150oC = 1.5A Maximum
• Built-in Current Limiting
• ESD Protected
• Controlled Switching Limits EMI and RFI
• Specified for 150oC Operation
• Temperature Compensated Spice Model Provided
• Related Literature
    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”