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RLP1N08LE Datasheet PDF : 9 Pages
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Data Sheet
RLP1N08LE
April 1999 File Number 2252.3
1A, 80V, 0.750 Ohm, Current Limited,
N-Channel Power MOSFET
The RLP1N08LE is a semi-smart monolithic power circuit
which incorporates a lateral bipolar transistor, two resistors,
a zener diode, and a PowerMOS transistor. Good control of
the current limiting levels allows use of these devices where
a shorted load condition may be encountered. “Logic level”
gates allow this device to be fully biased on with only 5V
from gate to source. The zener diode provides ESD
protection up to 2kV. These devices can be produced on the
standard PowerMOS production line.
Formerly developmental type TA09842.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RLP1N08LE
TO-220AB
L1N08LE
NOTE: When ordering, use the entire part number.
Features
• 1A, 80V
• rDS(ON) = 0.750Ω
• ILIMIT at 150oC = 1.5A Maximum
• Built-in Current Limiting
• ESD Protected
• Controlled Switching Limits EMI and RFI
• Specified for 150oC Operation
• Temperature Compensated Spice Model Provided
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
Packaging
S
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
6-435
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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