The RFL1N18L and RFL1N20L and the RFP2N18L and RFP2N20L are n-channel enhancement-mode silicon-gate power, field-effect transistors specifically designed for use with logic level (5 volt) driving sources In applications such as programmable controllers, automotive switching, and solenoid drivers. This performance Isaccomplished through a special gate oxide design which provides full rated conduction at gate biases In the 3-5 volt range, thereby facilitating true on-off power control directly from logic circuit supply voltages.

FEATUREs:
■ Design optimized lor 5 volt gale drive
■ Can {>8 driven directly from Q-MOS, N-MOS, TTL Circuits
■ Compatible with automotive drive requirements
■ SOA ispower-dissipation limited
■ Nanosecond switching speeds
■ Linear transfer characteristics
■ High Input impedance
■ Majority carrier device