General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

FEATUREs and benefits
■ Low conduction losses due to low on-state resistance
■ Simple gate drive required due to low gate charge
■ Suitable for logic level gate drive sources

APPLICATIONs
■ DC-to-DC convertors