RD06HHF1(2010) 데이터시트 - MITSUBISHI ELECTRIC
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RD06HHF1
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MITSUBISHI ELECTRIC
DESCRIPTION
RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.
FEATURES
High power gain:
Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz
APPLICATION
For output stage of high power amplifiers in HF band mobile radio sets.
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