RD00HHS1(2010) 데이터시트 - MITSUBISHI ELECTRIC
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RD00HHS1
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MITSUBISHI ELECTRIC
DESCRIPTION
RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.
FEATURES
High power gain
Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz
APPLICATION
For output stage of high power amplifiers in HF Band mobile radio sets.
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제조사
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